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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

Name: BS816A1 PCHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor
Brand: Diodes Incorporated
Price: 1 USD

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor Manufactures

Brand Name : Diodes Incorporated

Model Number : BS816A-1

Place of Origin : USA

MOQ : 1pcs

Price : Email us for details

Payment Terms : T/T, Western Union

Supply Ability : 5000

Delivery Time : 1day

Packaging Details : Standard

Date Code : Newest code

Shipping by : DHL/UPS/Fedex

Condition : New*Original

Warranty : 365days

Lead free : Rohs Compliant

Lead times : Immediately Shipment

Package : 16NSOP

Mounting Style : SMD/SMT

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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR RF Transistors

Manufacturer:	DIODES
Product Category:	P-CHANNEL ENHANCEMENT
RoHS:	Details
Mounting Style:	-
Package / Case:	16NSOP
Packaging:	Standard
Unit Weight:	- oz

This transistor is suitable for RF power amplifiers in various applications such as wireless communication,

broadcasting, and industrial RF equipment.

● P-channel enhancement mode
● DMOS transistor technology
● High power handling capability
● Wide frequency range
● Low noise figure
● High gain
● Good linearity
● Small signal distortion
● RoHS compliant

Features
• High Breakdown Voltage
• High Input Impedance
• Fast Switching Speed
• Specially Suited for Telephone Subsets
• Ideal for Automated Surface Mount Assembly

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor

BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor Images

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